Researchers at MIT, along with collaborators from other institutions, have developed a new fabrication method that integrates high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. This breakthrough addresses longstanding challenges related to the high cost and specialized integration requirements of GaN, significantly improving accessibility for a broad range of electronic applications.
Gallium nitride is the second most widely used semiconductor after silicon. Its unique electrical properties make it ideal for applications such as lighting, radar systems, and power electronics. However, to fully harness its capabilities, GaN-based chips must be connected to silicon-based digital chips, commonly known as CMOS chips.
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